Electrically switchable valley polarization, spin/valley filter, and valve effects in transition-metal dichalcogenide monolayers interfaced with two-dimensional ferromagnetic semiconductors

Electron valleys in transition-metal dichalcogenide monolayers drive novel physics and allow designing multifunctional architectures for applications. We propose to manipulate the electron these systems spin/valley filter valve devices through band engineering. Instead of magnetic proximity effect that has been extensively used previous studies, our strategy, are directly coupled spin-polarized states two-dimensional ferromagnets. find this coupling results a valley-selective gap opening due spin-momentum locking monolayers. This gives rise variety unexpected electronic properties phenomena including half-metallicity, electrically switchable valley polarization, filter, effects further demonstrate idea ${\mathrm{MoTe}}_{2}/{\mathrm{CoCl}}_{2}$ ${\mathrm{CoCl}}_{2}/{\mathrm{MoTe}}_{2}/{\mathrm{CoCl}}_{2}$ van der Waals heterojunctions based on first-principles calculations. Thus, study provides way engineering contemporary devices.